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Thin SiO2films nitrided in N2O

Authors
Journal
Microelectronics Journal
0026-2692
Publisher
Elsevier
Publication Date
Volume
25
Issue
7
Identifiers
DOI: 10.1016/0026-2692(94)90033-7

Abstract

Abstract Thin oxide nitridation in N 2O has been demonstrated to improve the dielectric characteristics in terms of charge to breakdown and trapping under current injection. In this work we compare the results obtained with the RTP and conventional oven nitridation technologies. Both reference oxide and nitrided oxide samples have been considered. Auger electron spectroscopy provided the nitrogen depth profiles. The electrical characterization has been performed by means of the constant current stress and exponential current ramp stress techniques, as well as high-frequency and quasi-static capacitance-voltage (C-V) measurements for interfacial state density determination as a function of the injected charge.

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