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Cellular structures in Czochralski-grown SiGe bulk crystal

Authors
Journal
Journal of Crystal Growth
0022-0248
Publisher
Elsevier
Publication Date
Volume
312
Issue
8
Identifiers
DOI: 10.1016/j.jcrysgro.2009.10.025
Keywords
  • A1. Solid Solution
  • A1. Segregation
  • A1. Constitutional Supercooling
  • A2. Czochralski Method
  • A2. Single Crystal Growth
  • B2. Semiconducting Silicon Compounds
Disciplines
  • Law

Abstract

Abstract A high purity Si x Ge 1 −x alloy ( x 0=0.89) 48 mm in length with a maximum diameter of 25 mm was grown by the Czochralski method. Development of the cellular structures was evaluated by observing growth striations in the crystal by means of X-ray topography and optical microscopy. Temporary and fatal cellular structures were detected. Two possible factors were distinguished as being responsible for the origin of the cell formations: an enhancement of the effective growth velocity and a gradual reduction of Si composition. Both factors lead to the occurrence of constitutional supercooling beyond the critical relation between growth velocity and alloy composition.

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