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Ion beam synthesis of Si3N4amorphous buried layers

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DOI: 10.1016/b978-0-444-89418-2.50035-7

Abstract

Abstract It was demonstrated that it is possible to prevent the crystallization of buried Si3N4 layers formed by N+ implantation with E = 150 keV, Φ = 5.0 × 1017 N+ cm2 and TA = 1200°C (2 h). To achieve this, preliminary implantation with E =150 keV and Φ ≥ 5.0 × 1016O+ cm2 has to be carried out. Radiation defects induced during O+ implantation stimulate the process of crystallization.

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