Affordable Access

Quantum mechanical enhancement of the random dopant induced threshold voltage fluctuations and lowering in sub 0.1 micron MOSFETs

Authors
Publisher
Institute of Electrical and Electronics Engineers
Publication Date
Keywords
  • Tk Electrical Engineering. Electronics Nuclear Engineering
Disciplines
  • Physics

Abstract

A detailed study of the influence of quantum effects in the inversion layer on the random dopant induced threshold voltage fluctuations and lowering in sub 0.1 micron MOSFETs has been performed. This has been achieved using a full 3D implementation of the density gradient (DG) formalism incorporated in our previously published 3D `atomistic' simulation approach. This results in a consistent, fully 3D, quantum mechanical picture which implies not only the vertical inversion layer quantisation but also the lateral confinement effects manifested by current filamentation in the `valleys' of the random potential fluctuations. We have shown that the net result of including quantum mechanical effect, while considering statistical fluctuations, is an increase in both threshold voltage fluctuations and lowering.

There are no comments yet on this publication. Be the first to share your thoughts.