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Duty ratio-controlled reflective property of silicon nitride films deposited at room temperature using a pulsed-PECVD at SiH4–NH3plasma

Authors
Journal
Current Applied Physics
1567-1739
Publisher
Elsevier
Publication Date
Volume
11
Issue
1
Identifiers
DOI: 10.1016/j.cap.2010.11.013
Keywords
  • Silicon Nitride
  • Pulsed
  • Plasma-Enhanced Chemical Vapor Deposition
  • Reflectance
  • Model
  • Room Temperature
Disciplines
  • Chemistry
  • Computer Science
  • Medicine

Abstract

Abstract Using pulsed, plasma-enhanced chemical vapor deposition system, silicon nitride films were deposited from SiH 4 and NH 3 at room temperature. Duty ratio was controlled in a range of 20–100% incrementally by 20% at radio frequency bias powers of 50, 70, and 90 W. Reflectance was studied as a function of the process parameters mentioned earlier. The impact of duty ratio on the reflectance was prominent at 70 W and this was strongly correlated with a ratio of high ion energy to low ion energy. Interestingly, the reflectance at other powers yielded a strong correlation with high ion energy flux. A comparison study with other film properties revealed that the reflectance decreased with a decrease in film thickness. A neural network model was constructed to predict various effects of diagnostic variables on the reflectance.

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