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Scanning tunneling microscopy of thermally cleaned InP surfaces in an arsenic flux

Authors
Journal
Surface Science
0039-6028
Publisher
Elsevier
Publication Date
Volume
267
Identifiers
DOI: 10.1016/0039-6028(92)91118-u

Abstract

Abstract Thermally cleaned InP surfaces in an arsenic flux have been observed using an ultra-high-vacuum scanning tunneling microscope (UHV-STM). The STM image of the reconstructed In-stabilized surface showed 1.6 nm periodic lines in the [110] direction. The width of these lines was about 0.8 nm, each line comprising two rows when the sample was heated at 510°C for about one minute in an arsenic flux. On the other hand, the lines were about 0.4 nm wide and comprised a single row when the sample was heated at a higher temperature for a longer time. This result suggests that the In-stabilized surface comprises one or two In-In dimers and missing dimers per 4 × 2 cell, and that the dimer density depends on the cleaning conditions. For samples annealed at 480°C in a vacuum of 10 −5 Pa for about ten minutes after cleaning, the surface image showed 4 × 2 In-stabilized domains and 2 × 4 As-stabilized domains. This structure is thought to be formed by a desorption of surface atoms during annealing.

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