Affordable Access

Publisher Website

Carrier drift mobilities and PL spectra of high resistivity Cadmium Telluride

Authors
Journal
Journal of Crystal Growth
0022-0248
Publisher
Elsevier
Publication Date
Volume
101
Identifiers
DOI: 10.1016/0022-0248(90)91095-8

Abstract

Abstract Time-of-flight (TOF) measurements and photoluminescence (PL) properties of Cl-doped semi-insulating CdTe, grown by the gradient freeze (GF) method are described. By choosing appropriate growth conditions, drift mobilities as high as 1100 and 80 cm 2/V·s for electrons and holes respectively were obtained, which are comparable to those grown by the traveling heater method (THM). From a comparison of PL and TOF results, correlations between the intensity of PL line W (at 1.587 eV) and the drift mobilities of both electrons and holes have been found. The relations of the PL lines W and G (at 1.591 eV) are analyzed by a compensating defect model composed of (V CdCl Te) and (V Cd2Cl Te).

There are no comments yet on this publication. Be the first to share your thoughts.