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Harmonic and intermodulation performance of moderate inversion MOSFET transconductors

Authors
Journal
AEU - International Journal of Electronics and Communications
1434-8411
Publisher
Elsevier
Volume
66
Issue
11
Identifiers
DOI: 10.1016/j.aeue.2012.03.007
Keywords
  • Harmonic Distortion
  • Intermodulation Distortion
  • Mosfet
  • Transconductors
Disciplines
  • Musicology

Abstract

Abstract This article discusses the harmonic and intermodulation performance of moderate inversion MOSFET transconductors. The bulk of the nMOS transistor is tied to ground, at all levels of inversion, including moderate inversion and the transistor is operating in the saturation region where it behaves qualitatively as a constant current source. The current–voltage characteristic of the transistor is approximated using a Fourier-series model. Using this model, analytical expressions are obtained for amplitudes of the harmonics and intermodulation products resulting from multi-sinusoidal gate-to-source input voltages. The special case of a two equal-amplitude sinusoidal input is considered in detail and the results are compared with previously published results.

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