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Nanolithography using optical contact exposure in the evanescent near field

Authors
Journal
Microelectronic Engineering
0167-9317
Publisher
Elsevier
Publication Date
Volume
46
Identifiers
DOI: 10.1016/s0167-9317(99)00021-0
Keywords
  • Optical Lithography

Abstract

Nanolithography has been performed using optical contact exposure in the evanescent near field of an amplitude mask. Low stress silicon nitride membranes are used as conformable masks, patterned using electron beam lithography and lift-off metallisation. By using thin resist layers (60 nm) features as small as 120 nm on a 400 nm period have been formed by broadband exposure from a mercury arc lamp source. This resolution is below the conventional diffraction limit for projection optical lithography and illustrates the promise for extending optical lithography into the sub-100nm realm.

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