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Excitonic photoluminescence properties of nanocrystalline GaSb and Ga0.62In0.38Sb embedded in silica films

Authors
  • liu, fm
  • wang, tm
  • zhang, ld
  • gh, li
  • han, hx
Publication Date
Jan 01, 2002
Source
Knowledge Repository of SEMI,CAS
Keywords
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Unknown
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Abstract

The GaSb and Ga0.62In0.38Sb nanocrystals were embedded in the SiO2 films by radio-frequency magnetron co-sputtering and were grown on GaSb and Si substrates at different temperatures. We present results on the 10K excitonic photoluminescence (PL) properties of nanocrystalline GaSb and Ga0.62In0.38Sb as a function of their size. The measurements show that the PL of the GaSb and Ga0.62In0.38Sb nanocrystallites follows the quantum confinement model very closely. By using deconvolution of PL spectra, origins of structures in PL were identified. (C) 2002 Elsevier Science B.V. All rights reserved.

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