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Excited-State Spectroscopy of Spin Defects in Hexagonal Boron Nitride.

Authors
  • Yu, Pei1, 2
  • Sun, Haoyu1, 2
  • Wang, Mengqi1, 2
  • Zhang, Tao1, 2
  • Ye, Xiangyu1, 2
  • Zhou, Jingwei1, 2
  • Liu, Hangyu1, 2
  • Wang, Cheng-Jie1, 2
  • Shi, Fazhan1, 2
  • Wang, Ya1, 2
  • Du, Jiangfeng1, 2
  • 1 CAS Key Laboratory of Microscale Magnetic Resonance and School of Physical Sciences, University of Science and Technology of China, Hefei 230026, People's Republic of China. , (China)
  • 2 CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, People's Republic of China. , (China)
Type
Published Article
Journal
Nano Letters
Publisher
American Chemical Society
Publication Date
Apr 19, 2022
Identifiers
DOI: 10.1021/acs.nanolett.1c04841
PMID: 35439014
Source
Medline
Keywords
Language
English
License
Unknown

Abstract

A negatively charged boron vacancy (VB-) color center in hexagonal boron nitride has recently been proposed as a promising quantum sensor due to its excellent properties. However, the spin level structure of the VB- color center is still unclear, especially for the excited state. Here we measured and confirmed the excited-state spin transitions of VB- using an optically detected magnetic resonance (ODMR) technique. The zero-field splitting of the excited state is 2.06 GHz, the transverse splitting is 93.1 MHz, and the g factor is 2.04. Moreover, negative peaks in fluorescence intensity and ODMR contrast at the level anticrossing point were observed, and they further confirmed that the spin transitions we measured came from the excited state. Our work deepens the understanding of the excited-state structure of VB- and promotes VB--based quantum sensing applications.

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