Epitaxy of Ge on offcut Si substrate for growth of In0.01Ga0.99As
- Authors
- Publication Date
- Jan 01, 2011
- Source
- Knowledge Repository of SEMI,CAS
- Keywords
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- Unknown
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Abstract
Epitaxy of Ge on offcut Si(001) for growth of In0.01Ga0.99As was studied. Anti-phase domains were prevented in In0.01Ga0.99As layer except on the In0.01Ga0.99As/Ge interface. Threading dislocations of Ge deteriorate the quality of In0.01Ga0.99As remarkably.?2011 IEEE.
