Affordable Access

Epitaxial growth of SiC on complex substrates

Authors
  • sun, gs
  • jm, li
  • luo, mc
  • zhu, sr
  • wang, l
  • zhang, ff
  • lin, ly
  • chinese, gs r sun
Publication Date
Jan 01, 2001
Source
Knowledge Repository of SEMI,CAS
Keywords
License
Unknown
External links

Abstract

Epitaxial growth of SiC on complex substrates was carried out at substrate temperature from 1200 degreesC to 1400 degreesC. Three kinds of new complex substrates, c-plane sapphire, AlN/sapphire, and GaN/AlN/sapphire, were used in this study. We obtained a growth rate in the range of 1-6 mum/h. Thick (6 mum) SIC epitaxial layers with no cracks were successfully obtained on AlN/sapphire and GaN/AlN/sapphire substrates. X-ray diffraction patterns have confirmed that single-crystal SiC was obtained on these complex substrates. Analysis of optical transmission spectra of the SIC grown on sapphire substrates shows the lowest-energy gap near 2.2 eV, which is the value for cubic SiC. The undoped SIC showed n-type electrical conductivity. (C) 2001 Elsevier Science B.V. All rights reserved.

Report this publication

Statistics

Seen <100 times