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Epitaxial Growth of Non-polar ZnS on Sapphire Substrate by Mist Chemical Vapor Deposition

Authors
  • Okita, K.
  • Goto, T.
  • Tanaka, Y.
  • Takenouchi, M.
  • Yatabe, Z.
  • Nakamura, Y.
  • Zenji Yatabe
Type
Conference
Journal
Extended Abstracts of the 2017 International Conference on Solid State Devices and Materials
Publisher
The Japan Society of Applied Physics
Publication Date
Sep 23, 2017
Identifiers
DOI: 10.7567/ssdm.2017.ps-8-08
Source
MyScienceWork
License
Green

Abstract

Non-polar ZnS layers were epitaxially grown on mplane sapphire substrates by mist chemical vapor deposition at atmospheric pressure. For this growth, ZnO buffer layers were inserted between the ZnS and the sapphire because ZnO has an intermediate lattice constant.

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