Epitaxial growth of Ge0.975Sn0.025 alloy films on Si(001) substrates by molecular beam epitaxy
- Authors
-
- sj, su
- wang, w
- zhang, gz
- wx, hu
- bai, aq
- xue, cl
- zuo, yh
- cheng, bw
- wang, qm
- Publication Date
- Jan 01, 2011
- Source
- Knowledge Repository of SEMI,CAS
- Keywords
-
- Gesn
- Ge
- Molecular Beam Epitaxy
- Epitaxial Growth
- Semiconductors
- Ge(001)2X1
- 光电子学
- Germanium
- Atomic Layer Deposition
- Epitaxy
- Semiconductors
- Ge
- Germanium (Deutsch)
- Germanium (Francais)
- Atomic Layer Epitaxial Growth
- Ale
- Mle Growth
- Molecular Layer Epitaxial Growth
- Chemical Beam Epitaxial Growth
- Cbe
- Gas Source Mbe
- Gsmbe
- Metalorganic Molecular Beam Epitaxy
- Mombe
- Ommbe
- Chemical Vapour Deposition
- Apcvd
- Chemical Vapor Deposition
- Cvd
- Laser Cvd
- Laser-Induced Cvd
- Lpcvd
- Chemical Vapour Infiltration
- Chemical Vapor Infiltration
- Cvi
- Crystal Growth From Vapour
- Laser Deposition
- Mocvd
- Metalorganic Chemical Vapour Deposition
- Movpe
- Omcvd
- Omvpe
- Molecular Beam Epitaxial Growth
- Mbe
- Migration-Enhanced Epitaxy
- Vapour Phase Epitaxial Growth
- Hot Wall Epitaxial Growth
- Vapor Phase Epitaxial Growth
- Vpe
- Cvi (Fabrication)
- Ald
- Molecular Beam Epitaxy
- Coulomb-Bethe
- Many-Body Expansion
- Epitaxial Growth
- Solid Phase Epitaxial Growth
- Solid Phase Epitaxy
- Spe
- Semiconducting Materials
- Semi-Conductors
- Crystalline Semiconductors
- Semiconductor Devices
- Semiconductor Alloys
- Space-Charge Limited Devices
- Halbleiter
- Semi-Conducteurs
- License
- Unknown
- External links
