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Enhancement of conductivity and transmittance of ZnO films by post hydrogen plasma treatment

  • cai, pf
  • you, jb
  • zhang, xw
  • dong, jj
  • yang, xl
  • yin, zg
  • chen, nf
  • chinese, xw r zhang
Publication Date
Jan 01, 2009
Knowledge Repository of SEMI,CAS
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We studied the effects of hydrogen plasma treatment on the electrical and optical properties of ZnO films deposited by radio frequency magnetron sputtering. It is found that the ZnO H film is highly transparent with the average transmittance of 92% in the visible range. Both carrier concentration and mobility are increased after hydrogen plasma treatment, correspondingly, the resistivity of the ZnO H films achieves the order of 10(-3) cm. We suggest that the incorporated hydrogen not only passivates most of the defects and/or acceptors present, but also introduces shallow donor states such as the V-O-H complex and the interstitial hydrogen H-i. Moreover, the annealing data indicate that H-i is unstable in ZnO, while the V-O-H complex remains stable on the whole at 400 degrees C, and the latter diffuses out when the annealing temperature increases to 500 degrees C. These results make ZnO H more attractive for future applications as transparent conducting electrodes.

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