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Energy Expenditure Upon the Formation of the Elastically Stressed State in the Layers of a Step-Graded Metamorphic Buffer in a Heterostructure Grown on a (001) GaAs Substrate

Authors
  • Aleshin, A. N.
  • Bugaev, A. S.
  • Ruban, O. A.
  • Saraikin, V. V.
  • Tabachkova, N. Yu.
  • Shchetinin, I. V.
Type
Published Article
Journal
Semiconductors
Publisher
Pleiades Publishing
Publication Date
Aug 07, 2019
Volume
53
Issue
8
Pages
1066–1074
Identifiers
DOI: 10.1134/S1063782619080025
Source
Springer Nature
Keywords
License
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Abstract

AbstractOn the basis of data on X-ray structural analysis performed by the method of reciprocal-space mapping and investigations using secondary-ion mass spectrometry and transmission electron microscopy, it is shown that vertical compressive stresses also arise in a multilayer epitaxial heterostructure comprised of a step-graded metamorphic buffer along with lateral compressive stresses. The cause of the appearance of vertical stresses is the effect of interlayer hardening, which arises due to the deceleration of fragments of glide dislocations by interphase boundaries. Analysis performed within the framework of the linear theory of elasticity shows that the elastically stressed state of the buffer steps is similar to the state that can be achieved as a result of a two-stage deformation process: bulk and biaxial compression. Bulk compression leads to large energy expenditures in the formation of the structure of the buffer steps, which is reflected, in particular, in violation of the coherence between the dislocation-free and the underlying layers.

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