On the Electro-Thermal 2D FEM Parametric Analysis of SiC Vertical Mosfet including Gate-Oxide Charge-Trapping Thermal Dependency. Application for Fast Transient Extreme Short-Circuit Operation

This article proposes a generic and complete electrothermal 4H-SiC physical Mosfet model. Static and transient in hard short-circuit operation behaviors are successfully performed using 2D Comsol TM software. Influence of fixed charges and traps at the 4H-SiC/SiO2 interface has been highlighted, both for static and transient. An additional mobility coefficient through Arora's mobility model was then suggested to fully fit the transient model in hard short-circuit operation.