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Electronic structure of silicon interfaces with amorphous and epitaxial insulating oxides: Sc2O3, Lu2O3, LaLuO3

Authors
  • Afanas'ev, V. V.
  • Shamuilia, S.
  • Badylevich, M.
  • Stesmans, A.
  • Edge, L. F.
  • Tian, W.
  • Schlom, D. G.
  • Lopes, J. M. J.
  • Roeckerath, M.
  • Schubert, J.
Publication Date
Jan 01, 2007
Source
Juelich Shared Electronic Resources (JuSER)
Keywords
Language
English
License
White
External links

Abstract

Spectroscopy of internal photoemission, photoconductivity, and optical absorption is used to characterize the differences in the electronic structure of interfaces of silicon with several oxides (Sc2O3, Lu2O3, LaLuO3) grown as epitaxial layers or as amorphous films. As compared to their crystalline counterparts, the amorphous oxides exhibit significant band-tail states predominantly associated with the smearing-out of the conduction band edge. In SC203 a difference in bandgap width between the crystalline and amorphous phases, caused by variation of the energy of the oxide valence band top, is also observed. No structure-sensitive interface dipoles are found to affect the band alignment at the Si/oxide interfaces.

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