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Electronic phase diagram of single-element silicon "strain" superlattices.

Authors
  • Liu, Zheng
  • Wu, Jian
  • Duan, Wenhui
  • Lagally, Max G
  • Liu, Feng
Type
Published Article
Journal
Physical Review Letters
Publisher
American Physical Society
Publication Date
Jul 02, 2010
Volume
105
Issue
1
Pages
16802–16802
Identifiers
PMID: 20867470
Source
Medline
License
Unknown

Abstract

The evidence that the band gap of Si changes significantly with strain suggests that by alternating regions of strained and unstrained Si one creates a single-element electronic heterojunction superlattice (SL), with the carrier confinement defined by strain rather than by the chemical differences in conventional compositional SLs. Using first-principles calculations, we map out the electronic phase diagram of a one-dimensional pure-silicon SL. It exhibits a high level of phase tunability, e.g., tuning from type I to type II. Our theory rationalizes a recent observation of a strain SL in a Si nanowire and provides general guidance for the fabrication of single-element strain SLs.

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