ELECTRON-TRANSPORT THROUGH GAALAS BARRIERS IN GAAS
- Authors
-
- feng, sl
- krynicki, j
- zazoui, m
- bourgoin, jc
- bois, p
- rosencher, e
- univ, sl pl feng
- Publication Date
- Jan 01, 1993
- Source
- Knowledge Repository of SEMI,CAS
- Keywords
-
- Resonant Tunneling Diodes
- Current-Voltage Characteristics
- Quantum-Wells
- Algaas Gaas
- Superlattices
- Layers
- 半导体物理
- Electron Paramagnetic Resonance Spectroscopy
- Current Voltage Characteristics
- Quantum Wells
- Metallic Superlattices
- Layers
- 摄谱学
- Electron Spin Resonance Spectroscopy
- Epr Spectroscopy
- Esr Spectroscopy
- Spectrography
- Spectrophotography
- Spectroscopy
- Alpha Spectroscopy
- Paramagnetic Resonance Spectroscopy
- Hot Electron Transistors
- Het
- Resonant Hot Electron Tunnelling Transistors
- Rhet
- Magnetic Resonance Spectroscopy
- Cimp
- Point Contact Spectroscopy
- Point Contacts
- Quantum Beat Spectroscopy
- Quantum Interference Phenomena
- Quantum Point Contacts
- Resonant Tunnelling
- Resonant Tunneling
- Resonant Tunnelling Devices
- Resonant Tunneling Devices
- Resonant Tunnelling Diodes
- Resonant Tunneling Diodes
- Rtd
- Astronomical Spectroscopy
- Hmeas
- Time Of Flight Spectroscopy
- Tunnelling
- Electron Tunnelling
- Esaki Effect
- Tunnel Effect
- Tunneling
- Two-Photon Spectroscopy
- Weak Localisation
- Weak Localization
- Electron Paramagnetic Resonance
- Electron Spin Resonance
- I V Characteristics
- V A Characteristics
- Wells, Quantum
- Multiple Quantum Well Structures
- Multilayers, Compositionally Modulated Metallic
- Superlattices
- Optical Superlattices
- Order Disorder Relationships
- Disordering
- Modulated Structure
- Ordering
- Ordnungs-Entordnungsbeziehungen
- Relation Ordre-Desordre
- Lamina
- Plies
- License
- Unknown
- External links
Abstract
We have analyzed electronic transport through a single, 200-angstrom-thick, Ga0.74Al0.36As barrier embedded in GaAs. At low temperatures and high electric field, the Fowler-Nordheim regime is observed, indicating that the barrier acts as insulating layers. At higher temperatures the thermionic regime provides an apparent barrier height, decreasing with the field, which is equal to the expected band offset when extrapolated to zero field. However, for some samples, the current is dominated by the presence of electron traps located in the barrier. A careful analysis of the temperature and field behavior of this current allows to deduce that the mechanism involved is field-enhanced emission from electron traps. The defects responsible are tentatively identified as DX centers, resulting from the contamination of the barrier by donor impurities.
