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Electron irradiation-induced defects in InP pre-annealed at high temperature

Authors
  • y. w.), yw zhao (zhao
  • z. y.), zy dong (dong
  • a. h.), ah deng (deng
Publication Date
Jan 01, 2006
Source
Knowledge Repository of SEMI,CAS
Keywords
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Abstract

Electron irradiation-induced deep level defects have been studied in InP which has undergone high-temperature annealing in phosphorus and iron phosphide ambients, respectively. In contrast to a high concentration of irradiation-induced defects in as-grown and phosphorus ambient annealed InP, InP pre-annealed in iron phosphide ambient has a very low concentration of defects. The phenomenon has been explained in terms of a faster recombination of radiation-induced defects in the annealed InP. The radiation-induced defects in the annealed InP have been compared and studied. (c) 2006 Elsevier Ltd. All rights reserved.

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