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Electrical transport of spin-polarized carriers in disordered ultrathin films.

Authors
  • Hernandez, L M
  • Bhattacharya, A
  • Parendo, Kevin A
  • Goldman, A M
Type
Published Article
Journal
Physical review letters
Publication Date
Sep 19, 2003
Volume
91
Issue
12
Pages
126801–126801
Identifiers
PMID: 14525384
Source
Medline
License
Unknown

Abstract

Slow, nonexponential relaxation of electrical transport accompanied by memory effects has been induced in quench-condensed ultrathin amorphous Bi films by the application of a parallel magnetic field. This behavior, which is very similar to space-charge limited current flow, is found in extremely thin films well on the insulating side of the thickness-tuned superconductor-insulator transition. It may be the signature of a collective state that forms when the carriers are spin polarized at low temperatures and in high magnetic fields.

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