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Electrical characterizations of solution-processed dielectric layer of octamethylcyclotetrasiloxane

Authors
  • Jung, Hunsang
  • Kim, Minkeun
  • Kim, Yejin
  • Oh, Sewook
  • Kang, Chi-Jung
  • Yoon, Tae-Sik
  • Lee, Hyun Ho1, 2, 3, 2, 4, 2
  • 1 Department of Chemical Engineering
  • 2 Myongji University
  • 3 Department of Physics
  • 4 Department of Material Science and Engineering
Type
Published Article
Journal
Microelectronic Engineering
Publisher
Elsevier
Publication Date
Jan 01, 2014
Accepted Date
Jan 07, 2014
Volume
118
Pages
6–10
Identifiers
DOI: 10.1016/j.mee.2014.01.004
Source
Elsevier
Keywords
License
Unknown

Abstract

Solution processed dielectric layer was fabricated with octamethylcyclotetrasiloxane (OMTS) by UV/ozone oxidation and thermal annealing. Annealing temperatures of 100°C, 300°C, and 500°C were examined and their dielectric properties were characterized on structures of metal–insulator–silicon (MIS) capacitor and thin film transistor (TFT) with solution-processed zinc-tin-oxide (ZTO) semiconductor. Chemical changes from the UV/ozone oxidation and annealing were analyzed by FTIR and XPS. For the 500°C annealed dielectric layer with UV/ozone oxidation, no hysteresis in capacitance–voltage (C–V) measurement was detected having a high dielectric constant (k) of 5.52. The OMTS film can be applicable as a gate dielectric layer towards intensive development of printed electronics.

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