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Effects of non-fatal electrostatic discharge on the threshold voltage degradation in nano CMOS devices

Authors
  • Wong, Hei1
  • Dong, Shurong2
  • Chen, Zehua3
  • 1 City University of Hong Kong, Hong Kong, 999077, China , Hong Kong (China)
  • 2 Zhejiang University, Hangzhou, 310007, China , Hangzhou (China)
  • 3 Macronix Microelectronics (Suzhou), Suzhou, 215000, China , Suzhou (China)
Type
Published Article
Journal
Science China Information Sciences
Publisher
Science China Press
Publication Date
Aug 09, 2021
Volume
65
Issue
2
Identifiers
DOI: 10.1007/s11432-020-3197-8
Source
Springer Nature
Disciplines
  • Letter
License
Yellow
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