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Effects of the lateral ordering of self-assembled SiGe nanoislands grown on strained Si1 − xGex buffer layers

Authors
  • Strelchuk, V. V.1
  • Nikolenko, A. S.1
  • Lytvyn, P. M.1
  • Kladko, V. P.1
  • Gudymenko, A. I.1
  • Valakh, M. Ya.1
  • Krasilnik, Z. F.2
  • Lobanov, D. N.2
  • Novikov, A. V.2
  • 1 National Academy of Sciences of Ukraine, V. Lashkaryov Institute of Semiconductor Physics, Kyiv, 03028, Ukraine , Kyiv (Ukraine)
  • 2 Russian Academy of Sciences, Institute for Physics of Microstructures, Nizhni Novgorod, 603950, Russia , Nizhni Novgorod (Russia)
Type
Published Article
Journal
Semiconductors
Publisher
Pleiades Publishing
Publication Date
May 06, 2012
Volume
46
Issue
5
Pages
647–654
Identifiers
DOI: 10.1134/S1063782612050211
Source
Springer Nature
Keywords
License
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Abstract

Atomic-force microscopy, micro-Raman spectroscopy, and high resolution X-ray diffraction are applied to study the spatial ordering in single layers of SiGe nanoislands grown on a strained Si1 − xGex buffer sublayer. It is shown that, apart from stimulating the spatial ordering of nanoislands, the introduction of a Si1 − xGex sublayer leads to an enhanced role for interdiffusion processes. An unusually high increase in the volume of nanoislands in the process of the epitaxy is related to the anomalously strong diffusion from the buffer sublayer into the islands that is induced by nonuniform fields of elastic strains. The anisotropy of the islands shape and spatial ordering is discussed in terms of the anisotropy of the diffusion processes in spatially nonuniform fields of elastic strains.

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