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Effects of Electronic States at Insulator/AlGaN Interfaces on Threshold Voltage Instability of Al2O3/AlGaN/GaN Structures

Authors
Type
Conference
Journal
Extended Abstracts of the 2016 International Conference on Solid State Devices and Materials
Publisher
The Japan Society of Applied Physics
Publication Date
Sep 12, 2016
Identifiers
DOI: 10.7567/ssdm.2016.n-4-02
Source
MyScienceWork
License
Green

Abstract

This paper presents the effects of the inductively coupled plasma (ICP) etching of AlGaN surface on the resulting threshold voltage (VTH) instability of Al2O3/AlGaN/GaN structures. It was found from the measured capacitance – voltage (C–V) characteristics that the ICP etching of the AlGaN surface showed larger VTH shifts than in the sample without ICP etching. Using a calculation method for describing C–V characteristics, we also analyzed this VTH shifts. It is likely that the deep negatively charged acceptor-like states originating from interface states at Al2O3/AlGaN caused VTH shifts toward the positive bias direction.

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