Effects of AlGaN/AlN Stacked Interlayers on GaN Growth on Si (111)
- Authors
- Publication Date
- Jan 01, 2010
- Source
- Knowledge Repository of SEMI,CAS
- Keywords
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- Unknown
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Abstract
We report the growth of high quality and crack-free GaN film on Si (111) substrate using Al0.2Ga0.8N/AlN stacked interlayers. Compared with the previously used single AlN interlayer, the AlGaN/AlN stacked interlayers can more effectively reduce the tensile stress inside the GaN layer. The cross-sectional TEM image reveals the bending and annihilation of threading dislocations (TDs) in the overgrown GaN film which leads to a decrease of TD density.
