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Effective-mass theory for InAs/GaAs strained superlattices

Authors
  • ss, li
  • xia, jb
  • sinicainst, li ss r acad
Publication Date
Jan 01, 1997
Source
Knowledge Repository of SEMI,CAS
Keywords
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Abstract

By using the recently developed exact effective-mass envelope-function theory, the electronic structures of InAs/GaAs strained superlattices grown on GaAs (100) oriented substrates are studied. The electron and hole subband structures, distribution of electrons and holes along the growth direction, optical transition matrix elements, exciton states, and absorption spectra are calculated. In our calculations, the effects due to the different effective masses of electrons and holes in different materials and the strain are included. Our theoretical results are in agreement with the available experimental data.

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