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Effect of the Working Gas Pressure on the Structure of ZnO Layers

Authors
  • Abduev, A. Kh.1
  • Akhmedov, A. K.1
  • Asvarov, A. Sh.1, 2
  • Muslimov, A. E.2
  • Kanevsky, V. M.2
  • 1 Amirkhanov Institute of Physics, Dagestan Federal Research Center, Russian Academy of Sciences, Makhachkala, 367030, Russia , Makhachkala (Russia)
  • 2 Shubnikov Institute of Crystallography, Federal Research Center “Crystallography and Photonics,” Russian Academy of Sciences, Moscow, 119333, Russia , Moscow (Russia)
Type
Published Article
Journal
Crystallography Reports
Publisher
Pleiades Publishing
Publication Date
Nov 20, 2020
Volume
65
Issue
6
Pages
995–1001
Identifiers
DOI: 10.1134/S1063774520060024
Source
Springer Nature
License
Yellow

Abstract

AbstractZinc oxide layers have been synthesized by magnetron sputtering of ZnO:Ga ceramic and ZnO:Ga + 10 wt % Zn cermet targets in an Ar atmosphere and by reactive sputtering of a zinc target in an Ar–O2 atmosphere. The effect of working gas pressure in the chamber on the growth and structure of ZnO layers has been studied. It has been established that, for all the target types used, the crystal structure of ZnO nanocrystallites forming the layer improves with an increase in working gas pressure. The effect of excess zinc in the reagent flow on the microstructure and properties of the ZnO layers has been analyzed by comparing the electron microscopy and X-ray diffraction data on the layers formed by sputtering targets of different types.

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