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Effect of the Structural Properties on the Electrical Resistivity of the Al/Ag Thin Films during the Solid-State Reaction

Authors
  • Altunin, R. R.1
  • Moiseenko, E. T.1
  • Zharkov, S. M.1, 2
  • 1 Siberian Federal University, Krasnoyarsk, 660041, Russia , Krasnoyarsk (Russia)
  • 2 Kirensky Institute of Physics, Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk, 660036, Russia , Krasnoyarsk (Russia)
Type
Published Article
Journal
Physics of the Solid State
Publisher
Pleiades Publishing
Publication Date
Apr 28, 2020
Volume
62
Issue
4
Pages
708–713
Identifiers
DOI: 10.1134/S1063783420040034
Source
Springer Nature
Keywords
License
Yellow

Abstract

AbstractBased on the results of in situ electron diffraction study of the solid-state reaction and electrical resistivity measurements on the Al/Ag thin films with an atomic ratio of Al : Ag = 1 : 3, the temperature of the reaction onset has been established and a model of the structural phase transitions has been proposed. The solid-state reaction begins at 70°C with the formation of the Al–Ag solid solution at the interface between the aluminum and silver nanolayers. It has been found that, in the course of the reaction, the intermetallic compounds γ-Ag2Al → μ-Ag3Al are successively formed. It is shown that the possibility of the formation of the μ‑Ag3Al phase during the solid-state reaction in the Al/Ag thin films depends on the aluminum-to-silver ratio, while the formation of the μ-Ag3Al phase begins only after all fcc aluminum has reacted.

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