Effect of rapid thermal annealing on InGaAs/GaAs quantum wells
- Authors
-
- zhuang, qd
- jm, li
- zeng, yp
- yoon, sf
- zheng, hq
- kong, my
- lin, ly
- Publication Date
- Jan 01, 2000
- Source
- Knowledge Repository of SEMI,CAS
- Keywords
-
- Annealing
- Ingaas/Gaas
- Quantum Wells
- Interdiffusion
- Quantum Dots
- Mbe
- Dot Superlattice
- 半导体材料
- Rapid Thermal Processing
- Heat Treatment
- Quantum Wells
- Diffusion
- Kirkendall Effect
- Quantum Dots
- Atomic Layer Deposition
- Rapid Thermal Annealing
- Rapid Thermal Process
- Annealing
- Incoherent Light Annealing
- Arc Lamp Annealing
- Flash Lamp Annealing
- Halogen Lamp Annealing
- Rta
- Rapid Thermal Nitridation
- Rapid Thermal Oxidation
- Rtp
- Recrystallisation Annealing
- Recrystallization Annealing
- Solution Annealing
- Solution Annealing Mechanisms
- Loesungsgluehung
- Mecanismes De Mise En Solution (Recuit)
- Solution Annealing Parameters
- Loesungsgluehbedingungen
- Parametres De Recuit En Solution Solide
- 辐射损伤
- Austempering
- Calcination
- Electron Beam Annealing
- Electron Beam Applications
- Electron Beam Deposition
- Graphitising
- Graphitizing
- Austenitising
- Homogenising
- Sensitisation (Metallurgy)
- Treatment, Heat
- Laser Beam Annealing
- Laser Annealing
- Magnetic Annealing
- Annealing, Magnetic
- Normalising
- Normalizing
- Radiation Effects
- Damage, Radiation
- Irradiation Effects
- Particle Scattering
- Radiation Damage
- Thermal Spikes
- Spheroidizing
- Thermomagnetic Treatment
- Ultraviolet Radiation Effects
- Uv Radiation Effects
- Annealing Mechanisms
- Gluehvorgang
- Heat Treatment Mechanisms
- Mecanismes De Recuit
- Annealing Parameters
- Gluehbedingungen
- Heat Treatment Parameters
- Parametres De Recuit
- Annealing Processes
- Gluehen
- Heat Treatment Processes
- Procede De Recuit
- Calcination (Francais)
- Kalzinierung
- Heat Treating
- Magnetische Gluehung
- Recuit Magnetique
- Normalizing Mechanisms
- Mecanismes De Normalisation
- Mecanismes De Recuits De Normalisation
- Normalisierung
- Normalizing Parameters
- Normalisierungsbedingungen
- Parametres De Normalisation
- Defauts D Irradiation
- Strahlungs Schaeden
- Irradiation
- Heating
- Heating Methods
- Thermal Treatment
- Alpha Annealing
- Alphatizing
- Galvannealing
- Soft Annealing
- Irradiation Damage
- Wells, Quantum
- Multiple Quantum Well Structures
- 扩散
- Gases--Diffusion
- Liquids--Diffusion
- Transpiration
- Bulk Diffusion
- Chemical Diffusion
- Diffusion Coefficient
- Diffusivity
- Eddy Diffusion
- Nusselt-Graetz Problems
- Pipe Diffusion
- Volume Diffusion
- Flow Through Porous Media
- Darcy'S Law
- Imbibition
- Reaction-Diffusion Systems
- Self-Diffusion
- Surface Diffusion
- Thermal Diffusion
- Dufour Effect
- Dufour Number
- Soret Effect
- Thermodiffusion
- Turbulent Diffusion
- 扩散率
- 扩散性
- Diffusion (Deutsch)
- Diffusion (Francais)
- Diffusion Rates
- Interdiffusion
- Material Transport Mechanisms
- Transport Mechanisms
- Self Diffusion
- Auto Diffusion
- Selbstdiffusion
- Diffusion Superficielle
- Oberflaechendiffusion
- Diffusion Effect
- Perfusion
- Diffusion Constant
- 自扩散
- 热扩散
- 扩散系数
- 涡流扩散
- 表面扩散
- Atomic Diffusion
- Autodiffusion
- Diffusion Couples
- Liquid Phase Diffusion
- 体扩散
- Diffusion In Solids
- Grain Boundary Diffusion
- Lattice Diffusion
- Solids--Diffusion
- Chemical Interdiffusion
- Diffusion Barriers
- Grain Boundary Migration
- Barriers A La Diffusion
- Diffusionssperren
- Diffusion Aux Joints De Grains
- Korngrenzen-Diffusion
- Effet Kirkendall
- Kirkendall-Effekt
- 晶粒间界扩散
- Dots, Quantum
- Semiconductor Quantum Dots
- Antidots
- Antidots, Semiconductor
- Quantum Boxes, Semiconductor
- Semiconductor Quantum Boxes
- Semiconductor Nanocrystals
- Semiconductor Nanoparticles
- Atomic Layer Epitaxial Growth
- Ale
- Mle Growth
- Molecular Layer Epitaxial Growth
- Chemical Beam Epitaxial Growth
- Cbe
- Gas Source Mbe
- Gsmbe
- Metalorganic Molecular Beam Epitaxy
- Mombe
- Ommbe
- Chemical Vapour Deposition
- Apcvd
- Chemical Vapor Deposition
- Cvd
- Laser Cvd
- Laser-Induced Cvd
- Lpcvd
- Chemical Vapour Infiltration
- Chemical Vapor Infiltration
- Cvi
- Crystal Growth From Vapour
- Laser Deposition
- Mocvd
- Metalorganic Chemical Vapour Deposition
- Movpe
- Omcvd
- Omvpe
- Molecular Beam Epitaxial Growth
- Mbe
- Migration-Enhanced Epitaxy
- Vapour Phase Epitaxial Growth
- Hot Wall Epitaxial Growth
- Vapor Phase Epitaxial Growth
- Vpe
- Cvi (Fabrication)
- Ald
- Molecular Beam Epitaxy
- Coulomb-Bethe
- Many-Body Expansion
- License
- Unknown
- External links
Abstract
We have studied the effect of rapid thermal annealing (RTA) on highly strained InGaAs/GaAs quantum wells by using photoluminescence (PL) and double-crystal X-ray diffraction (DCXRD) measurements. It is found that a distinct additional PL emission peak can be observed for the annealed samples. This PL emission possesses features similar to the PL emission from InGaAs/GaAs quantum dots (QDs) with the same indium content. It is proposed that this emission stems from QDs, which were formed during the annealing process. This formation is attributed to the favorable diffusion due to the inhomogeneous strain distribution in the InGaAs layer intersurface. The DCXRD measurements also confirm that the dominant relaxation is strain enhanced diffusion under the low annealing temperatures. (C) 2000 Elsevier Science B.V. All rights reserved.
