Effect of ion-induced damage on GaNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy
- Authors
-
- lh, li
- pan, z
- zhang, w
- lin, yw
- wang, xy
- rh, wu
- wk, ge
- Publication Date
- Jan 01, 2001
- Source
- Knowledge Repository of SEMI,CAS
- Keywords
-
- Molecular Beam Epitaxy
- Quantum Wells
- Band-Gap Energy
- Photoluminescence
- Temperature
- Ganxas1-X
- Films
- 半导体材料
- Atomic Layer Deposition
- Quantum Wells
- Photoluminescence
- Temperature
- Photography--Films
- Finite Volume Method
- Atomic Layer Epitaxial Growth
- Ale
- Mle Growth
- Molecular Layer Epitaxial Growth
- Chemical Beam Epitaxial Growth
- Cbe
- Gas Source Mbe
- Gsmbe
- Metalorganic Molecular Beam Epitaxy
- Mombe
- Ommbe
- Chemical Vapour Deposition
- Apcvd
- Chemical Vapor Deposition
- Cvd
- Laser Cvd
- Laser-Induced Cvd
- Lpcvd
- Chemical Vapour Infiltration
- Chemical Vapor Infiltration
- Cvi
- Crystal Growth From Vapour
- Laser Deposition
- Mocvd
- Metalorganic Chemical Vapour Deposition
- Movpe
- Omcvd
- Omvpe
- Molecular Beam Epitaxial Growth
- Mbe
- Migration-Enhanced Epitaxy
- Vapour Phase Epitaxial Growth
- Hot Wall Epitaxial Growth
- Vapor Phase Epitaxial Growth
- Vpe
- Cvi (Fabrication)
- Ald
- Molecular Beam Epitaxy
- Coulomb-Bethe
- Many-Body Expansion
- Wells, Quantum
- Multiple Quantum Well Structures
- 光致发光
- 温度
- Curing Temperature
- Temperatur
- Temperature (Francais)
- Body Temperature (Non-Biological)
- Atmospheric Temperature
- Temperature Control
- Water Temperature
- Temperatures
- Absolute Temperature
- Ambient Temperature
- Photographic Film
- Films
- Motion Pictures
- Movies
- Cinema
- Feature Films--History And Criticism
- Moving-Pictures
- Microfilms
- Filmstrips
- Film Slides
- Film Strips
- Slidefilms
- Anodised Layers
- Anodized Layers
- Claddings
- Cvd Coatings
- Chemical Vapor Deposited Coatings
- Chemical Vapour Deposited Coatings
- Cvd Thin Films
- Decorative Coatings
- Electrophoretic Coatings
- Fission Reactor Fuel Claddings
- Foils
- Mocvd Coatings
- Optical Fibre Cladding
- Optical Fiber Cladding
- Protective Coatings, Optical Fibre
- Plasma Arc Sprayed Coatings
- Plasma Sprayed Coatings
- Plasma Cvd Coatings
- Plasma Chemical Vapour Deposited Coatings
- Plasma Deposited Coatings
- Polymer Films
- Polymer Coatings
- Vacuum Deposited Coatings
- Vacuum Deposited Thin Films
- Vapour Deposited Coatings
- Vapor Deposited Coatings
- Vapor Deposited Thin Films
- Vapour Deposited Thin Films
- Elektrophoretische Ueberzuege
- Revetements Electrophoretiques
- Plasmalichtbogen-Spruehueberzuege
- Revetements Par Projection Au Plasma
- Motion Pictures (Entertainment)
- 有限体积法
- Art Films
- Cinefilms
- Moving Image Materials
- License
- Unknown
- External links
Abstract
The effect of ion-induced damage on GaNAs/GaAs quantum wells (QWs) grown by molecular beam epitaxy employing a DC plasma as the N source was investigated. Ion-induced damage results in: (i) an observed disappearance of pendellosung fringes in the X-ray diffraction pattern of the sample; (ii) a drastic decrease in intensity and a broadening in the full-width at half-maximum of photoluminescence spectra. It was shown that ion-induced damage strongly affected the bandedge potential fluctuations of the QWs. The bandedge potential fluctuations for the samples grown with and without ion removal magnets (IRMs) are 44 and 63 meV, respectively. It was found that the N-As atomic interdiffusion at the interfaces of the QWs was enhanced by the ion damage-induced defects. The estimated activation energies of the N-As atomic interdiffusion for the samples grown with and without IRMs are 3.34 and 1.78 eV, respectively. (C) 2001 Elsevier Science B.V. All rights reserved.
