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Effect of indium-doped interlayer on the strain relief in GaN films grown on Si(111)

Authors
  • Wu, JJ
  • Zhao, LB
  • Zhang, GY
  • Liu, XL
  • Zhu, QS
  • Wang, ZG
  • Jia, QJ
  • Guo, LP
  • Hu, TD
Publication Date
Jan 01, 2008
Source
Knowledge Repository of SEMI,CAS
Keywords
License
Unknown
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Abstract

Crack-free GaN films have been achieved by inserting an Indoped low-temperature (LT) AlGaN interlayer grown on silicon by metalorganic chemical vapor deposition. The relationship between lattice constants c and a obtained by X-ray diffraction analysis shows that indium doping interlayer can reduce the stress in GaN layers. The stress in GaN decreases with increasing trimethylindium (TMIn) during interlayer growth. Moreover, for a smaller TMIn flow, the stress in GaN decreases dramatically when In acts as a surfactant to improve the crystallinity of the AlGaN interlayer, and for a larger TMIn flow, the stress will increase again. The decreased stress leads to smoother surfaces and fewer cracks for GaN layers by using an In-doped interlayer than by using an undoped interlayer. In doping has been found to enhance the lateral growth and reduce the growth rate of the c face. It can explain the strain relief and cracks reduction in GaN films. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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