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Effect of an indium-doped barrier on enhanced near-ultraviolet emission from InGaN/AlGaN: In multiple quantum wells grown on Si(111)

Authors
  • jiejun), (wu
  • guoyi), gy zhang (zhang
  • xianglin), xl liu (liu
  • qinsheng), qs zhu (zhu
  • zhanguo), zg wang (wang
  • quanjie), qj jia (jia
  • liping), lp guo (guo
Publication Date
Jan 01, 2007
Source
Knowledge Repository of SEMI,CAS
Keywords
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Abstract

Low indium content InGaN/AlGaN multiple quantum wells (MQWs) have been grown on Si(111) substrate by metal-organic chemical vapour deposition (MOCVD). A new method of using an isoelectronic indium-doped AlGaN barrier has been found to be very effective in improving the crystalline quality and interfacial abruptness of InGaN quantum well layers. We grew five periods of In0.06Ga0.94N/Al0.20Ga0.80N:In MQWs with In-doped barrier layers and obtained strong near-ultraviolet (UV) emission (similar to 400 nm) at room temperature. An In-doped AlGaN barrier improves the room-temperature PL intensity of InGaN/AlGaN MQWs, making it a candidate barrier for a near-UV source on Si substrate.

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