Effect of gas pressure on the properties of silicon thin film
- Publication Date
- Jan 01, 2011
- Knowledge Repository of SEMI,CAS
- External links
A series of transition films from amorphous to microcrystalline silicon was successfully prepared by very high frequency plasma enhanced chemical vapor deposition(VHF-PECVD).Effects of gas pressure on the microstructure, photoelectric and transport properties of the films were investigated.The results indicate that increase of gas pressure improve the photosensitivity and deposition rate, while the order degree of the microstructure and transport properties get worse.