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Effect of emitter-base spacer design on the performance of InP/GaAsSb/InP DHBTs grown by MOCVD

Authors
  • Liu, Zhen
  • Zhu, Hong
  • Deng, ShuQing
  • Pan, XinYi
  • Huang, Yong
Type
Published Article
Journal
Physica Scripta
Publisher
IOP Publishing
Publication Date
Apr 02, 2024
Volume
99
Issue
5
Identifiers
DOI: 10.1088/1402-4896/ad3509
Source
ioppublishing
Keywords
Disciplines
  • Condensed matter and materials physics
License
Unknown

Abstract

Effect of spacer layer design between InP emitter and GaAsSb base in InP/GaAsSb/InP double heterojunction bipolar transistors (DHBTs) grown by MOCVD was investigated. A very thin tensile-strained GaAs layer, or a thin GaInP layer, or combination of both was inserted between InP emitter and GaAsSb base to mitigate Sb segregation and/or eliminate electron pile-up between emitter and base. With a base sheet resistances of ∼1800 ohm sq−1 for all devices, DHBTs with a GaAs spacer, a GaInP spacer and the combination demonstrate a current gain of 24, 49 and 64, respectively. The conduct band discontinuity ΔEc at InP/GaAsSb interfaces and the current blocking effect are effectively eliminated by employing the combination of GaAs and GaInP layers.

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