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Effect of Buffer Layer on Improvement of SnO2 Thin Film on Sapphire Substrate Formed by Mist Chemical Vapor Deposition

Authors
  • Win, Thant Zin1
  • Furukawa, Takumi1
  • Tanaka, Yudai1
  • Okita, Koshi1
  • Sue, Koji2
  • Zenji Yatabe3
  • Nakamura, Yusui4
Type
Published Article
Journal
2019 Compound Semiconductor Week (CSW)
Publisher
IEEE
Publication Date
May 23, 2019
Identifiers
DOI: 10.1109/iciprm.2019.8819187
Source
MyScienceWork
License
White

Abstract

Tin oxide (SnO 2 ) is an n-type wide band-gap semiconductor with excellent properties such as optical, electrical and chemical properties. In this research, SnO 2 thin films were grown on m-plane sapphire substrates by mist chemical vapor deposition. However, it was difficult to deposit high quality SnO 2 films because of the large lattice mismatch and the large difference in the thermal expansion coefficient between the SnO 2 film and the sapphire substrate. To improve the quality of SnO 2 films, we inserted a SnO 2 buffer layer to solve the lattice mismatch problem between the substrate and the film. We found that the surface morphologies of SnO 2 films with the buffer layers were smoother than the films without the buffer layers. Furthermore, the full width at half maximum (FWHM) of an X-ray ω-rocking curve for the SnO 2 thin film was reduced obviously. Thus, the crystal quality of SnO 2 films was much improved by introducing the buffer layers between the substrate and the thin films.

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