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Effect of Bismuth on the Properties of Elastically Stressed AlGaInAsP〈Bi〉/InP Heterostructures

Authors
  • Lunina, M. L.
  • Lunin, L. S.
  • Alfimova, D. L.
  • Pashchenko, A. S.
  • Danilina, E. M.
  • Nefedov, V. V.
Type
Published Article
Journal
Semiconductors
Publisher
Pleiades Publishing
Publication Date
Aug 07, 2019
Volume
53
Issue
8
Pages
1088–1091
Identifiers
DOI: 10.1134/S1063782619080141
Source
Springer Nature
Keywords
License
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Abstract

AbstractThe results of growing elastically stressed AlGaInAsP〈Bi〉 thin epitaxial layers from the liquid phase on indium phosphide substrates in a temperature-gradient field are discussed. The effect of bismuth on the structural perfection, the luminescence properties, and the external quantum yield of AlGaInAsP〈Bi〉/InP heterostructures is investigated.

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