Effect of antimony irradiation on InAs/Sb:GaAs quantum dots grown by molecular beam epitaxy Authors yang, xg yang, t wang, kf hm, ji hq, ni niu, zc wang, zg Publication Date Jan 01, 2011 Source Knowledge Repository of SEMI,CAS Keywords High-Density Temperature-Dependence Self-Formation Layers Well Mbe 半导体材料 Temperature Dependence Layers Well Atomic Layer Deposition Lamina Plies Atomic Layer Epitaxial Growth Ale Mle Growth Molecular Layer Epitaxial Growth Chemical Beam Epitaxial Growth Cbe Gas Source Mbe Gsmbe Metalorganic Molecular Beam Epitaxy Mombe Ommbe Chemical Vapour Deposition Apcvd Chemical Vapor Deposition Cvd Laser Cvd Laser-Induced Cvd Lpcvd Chemical Vapour Infiltration Chemical Vapor Infiltration Cvi Crystal Growth From Vapour Laser Deposition Mocvd Metalorganic Chemical Vapour Deposition Movpe Omcvd Omvpe Molecular Beam Epitaxial Growth Mbe Migration-Enhanced Epitaxy Vapour Phase Epitaxial Growth Hot Wall Epitaxial Growth Vapor Phase Epitaxial Growth Vpe Cvi (Fabrication) Ald Molecular Beam Epitaxy Coulomb-Bethe Many-Body Expansion License Unknown External links Full record on ir.semi.ac.cn
