Effect of AlN buffer thickness on GaN epilayer grown on Si(1 1 1)
- Authors
-
- Wei, M
- Wang, XL
- Pan, X
- Xiao, HL
- Wang, CM
- Hou, QF
- Wang, ZG
- Publication Date
- Jan 01, 2011
- Source
- Knowledge Repository of SEMI,CAS
- Keywords
-
- Gan
- Mocvd
- Si(111)
- Aln
- Vapor-Phase Epitaxy
- Layers
- Substrate
- Mocvd
- Stress
- 半导体材料
- Atomic Layer Deposition
- Vapor Phase Epitaxy
- Layers
- Substrate
- Atomic Layer Deposition
- Residual Stresses
- Stress (Mechanics)
- Photoelasticity
- Thermal Stresses
- Atomic Layer Epitaxial Growth
- Ale
- Mle Growth
- Molecular Layer Epitaxial Growth
- Chemical Beam Epitaxial Growth
- Cbe
- Gas Source Mbe
- Gsmbe
- Metalorganic Molecular Beam Epitaxy
- Mombe
- Ommbe
- Chemical Vapour Deposition
- Apcvd
- Chemical Vapor Deposition
- Cvd
- Laser Cvd
- Laser-Induced Cvd
- Lpcvd
- Chemical Vapour Infiltration
- Chemical Vapor Infiltration
- Cvi
- Crystal Growth From Vapour
- Laser Deposition
- Mocvd
- Metalorganic Chemical Vapour Deposition
- Movpe
- Omcvd
- Omvpe
- Molecular Beam Epitaxial Growth
- Mbe
- Migration-Enhanced Epitaxy
- Vapour Phase Epitaxial Growth
- Hot Wall Epitaxial Growth
- Vapor Phase Epitaxial Growth
- Vpe
- Cvi (Fabrication)
- Ald
- Molecular Beam Epitaxy
- Coulomb-Bethe
- Many-Body Expansion
- Lamina
- Plies
- 底物
- Atomic Layer Epitaxial Growth
- Ale
- Mle Growth
- Molecular Layer Epitaxial Growth
- Chemical Beam Epitaxial Growth
- Cbe
- Gas Source Mbe
- Gsmbe
- Metalorganic Molecular Beam Epitaxy
- Mombe
- Ommbe
- Chemical Vapour Deposition
- Apcvd
- Chemical Vapor Deposition
- Cvd
- Laser Cvd
- Laser-Induced Cvd
- Lpcvd
- Chemical Vapour Infiltration
- Chemical Vapor Infiltration
- Cvi
- Crystal Growth From Vapour
- Laser Deposition
- Mocvd
- Metalorganic Chemical Vapour Deposition
- Movpe
- Omcvd
- Omvpe
- Molecular Beam Epitaxial Growth
- Mbe
- Migration-Enhanced Epitaxy
- Vapour Phase Epitaxial Growth
- Hot Wall Epitaxial Growth
- Vapor Phase Epitaxial Growth
- Vpe
- Cvi (Fabrication)
- Ald
- Molecular Beam Epitaxy
- Coulomb-Bethe
- Many-Body Expansion
- 残余应力
- Cooling Stresses
- Mechanical Prestressing
- Metals--Residual Stresses
- Welding Stresses
- Internal Stresses
- Internal Strains
- Stress
- Stresses
- Stresses, Internal
- Stress-Strain Relations
- Stress-Strain Curves
- Yield Stress
- Hall-Petch Relationship
- Residual Stress
- Beanspruchung
- Contrainte
- Effort
- Tension
- Yield Point
- Limite Elastique
- Streckgrenze
- Damage Threshold
- Luder Bands
- 屈服点
- 光弹性
- Photoelastic Method
- Elasto-Optical Effects
- Piezo-Optical Effects
- Piezo-Magneto-Optical Effects
- Piezooptical Effects
- Strain-Optical Coefficients
- Stress-Optical Effects
- Piezoreflectance
- Reflectivity
- Light Reflection Spectra
- Optical Reflection
- Optical Reflection Spectra
- Reflectance
- Reflection Spectra
- Stress Effects
- Thermoreflectance
- 光[测]弹性
- 应力
- Thermal-Expansion Stresses
- License
- Unknown
- External links
Abstract
We studied the influence of high temperature AlN buffer thickness on the property of GaN film on Si (1 1 1) substrate. Samples were grown by metal organic chemical vapor deposition. Optical microscopy, atomic force microscopy and X-ray diffraction were employed to characterize the samples. The results demonstrated that thickness of high temperature AlN buffer prominently influenced the morphology and the crystal quality of GaN epilayer. The optimized thickness of the AlN buffer is found to be about 150 nm. Under the optimized thickness, the largest crack-free range of GaN film is 10 mm x 10 mm and the full width at half maximum of GaN (0 0 0 2) rocking curve peak is 621.7 arcsec. Using high temperature AlN/AlGaN multibuffer combined with AlN/GaN superlattices interlayer we have obtained 2 mu m crack-free GaN epilayer on 2 in Si (1 1 1) substrates. (C) 2011 Elsevier Ltd. All rights reserved.