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Diffusion profiles of low dosages chromium ions implanted into (1 0 0) crystalline silicon

Authors
Journal
Materials Science in Semiconductor Processing
1369-8001
Publisher
Elsevier
Publication Date
Volume
9
Identifiers
DOI: 10.1016/j.mssp.2006.01.010
Keywords
  • Cr
  • Si
  • Sims
  • Diffusion
  • Ion Implantation

Abstract

Abstract Chromium ions with low dosages (1×10 12 and 1×10 13 cm −2) are implanted into silicon (1 0 0) crystalline substrates. Thermal anneals were carried out at different temperatures between 300 and 1000 °C to study the effects of ion implantation dose on the Cr diffusion profiles. Secondary ion mass spectrometry (SIMS) has been used to characterize the profiles of the Cr impurities. At 1×10 12 cm −2 dosage and 500 °C anneal, the diffusivity of Cr in Silicon is determined to be 1.0×10 −14 cm 2 s −1.

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