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Interface phonons in asymmetric quantum well structures

Authors
Journal
Superlattices and Microstructures
0749-6036
Publisher
Elsevier
Publication Date
Volume
25
Identifiers
DOI: 10.1006/spmi.1998.0631
Disciplines
  • Physics

Abstract

Abstract In semiconductor microstructures with many layers, the phonon modes change from their bulk form and split into ‘confined LO phonons’ (LC) and ‘interface phonons’ (IF), the number and variety of which depends on both the number of layers and the number of different materials in the structure. This affects the electron–phonon scattering rates. Because of the current interest in inter-subband THz emitters, we use these LC and IF modes to evaluate the inter-subband electron–phonon scattering rate in THz emitter prototypes that are based on four-subband stepped quantum wells. These scattering rates in turn affect the population inversion predicted for these devices, so we compare the predicted population inversions for the most promising prototypes against those obtained using bulk phonon scattering rates.

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