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A transient layer in sendust on a silicon substrate, as studied by conversion electron Mössbauer spectroscopy

Authors
Journal
Solid State Communications
0038-1098
Publisher
Elsevier
Publication Date
Volume
48
Issue
5
Identifiers
DOI: 10.1016/0038-1098(83)90861-x

Abstract

Abstract The conversion electron Mössbauer spectra of thin layers of Sendust on a silicon substrate were measured at room temperature. It is shown that a transient layer exists in which the composition deviates from the ideal Sendust composition but in which the structure is still ordered.

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