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Adiabatic bond charge model for the phonons inA3B5semiconductors

Authors
Journal
Solid State Communications
0038-1098
Publisher
Elsevier
Publication Date
Volume
18
Issue
6
Identifiers
DOI: 10.1016/0038-1098(76)91757-9

Abstract

Abstract The adiabatic bond-charge model is extended to describe phonon dispersion curves and elastic properties in A 3 B 5 semiconductors. Asymmetry of the bond-charge position and of the force constants involving them is found to be the main consequence of ionicity. A six-parameter model provides a good fit to the experimental data for GaAs, GaSb and InSb. A small seventh parameter describing weak second-neighbor interactions is needed in GaP. Trends in the force-constant parameters are discussed.

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