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Theoretical investigation of electron-phonon interaction in one-dimensional Si quantum dot array interconnected with silicon oxide layers

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  • Musicology
  • Physics

Abstract

Theoretical investigation of electron-phonon interaction in one-dimensional silicon quantum dot array interconnected with silicon oxide layers Shigeyasu Uno* Hitachi Cambridge Laboratory, Hitachi Europe Ltd., Cavendish Laboratory, Madingley Road, Cambridge, CB3 0HE, United Kingdom Nobuya Mori Department of Electronic Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan Kazuo Nakazato† Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan Nobuyoshi Koshida† Division of Electronic and Information Engineering, Faculty of Technology, Tokyo University of Agriculture and Technology, Tokyo 184, Japan Hiroshi Mizuta† Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan �Received 3 August 2004; revised manuscript received 14 January 2005; published 18 July 2005� Electronic and phononic states and their interactions in one-dimensional arrays of Si quantum dots inter- connected with thin oxide layers is theoretically investigated. Electronic states under low electric field condi- tion are obtained in the Kronig-Penny potential. Approximate expression for phonon wave functions is devel- oped and numerically calculated using the linear atomic chain model. Simulated dispersion relation shows acoustic phonon modes, phonon band gaps, and confined optical phonon modes. Electron-phonon scattering rate is written using a one-dimensional expression. Intraminiband scattering rates and energy relaxation rates are simulated both for absorption and emission processes. The scattering rate varies from �1012 to �1014, depending on the initial electron energy. The scattering rate for absorption/emission processes rapidly de- creases at near the top/bottom of minibands due to limited number of phonon branches that can mediate the scattering processes. Negative energy relaxation rate is observed near the bottom

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