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Fast hydrogen diffusion in amorphous silicon

Authors
Journal
Journal of Non-Crystalline Solids
0022-3093
Publisher
Elsevier
Publication Date
Identifiers
DOI: 10.1016/0022-3093(87)90193-1

Abstract

Abstract H diffusion in molecular-beam-deposited amorphous Si (MB a-Si) and glow discharge films (GD a-Si:H), both grown at low temperature (T < 200° C), has been studied. The observed fast diffusion is the result of microvoids and columnar structural defects which are typical for such materials.

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