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Properties of atomic-layer-deposited ultra-thin AlN films on GaAs surfaces

Authors
Journal
Applied Surface Science
0169-4332
Publisher
Elsevier
Publication Date
Volume
314
Identifiers
DOI: 10.1016/j.apsusc.2014.07.024
Keywords
  • Gaas
  • Ald
  • Coating
  • Optical Spectroscopy
Disciplines
  • Physics

Abstract

Abstract Properties and passivation effect of ultra-thin AlN films fabricated on InGaAs/GaAs near-surface quantum wells by plasma-enhanced atomic layer deposition are investigated. The role of the coating on the surface is studied by examining the electric field build-up by photoreflectance. Photoluminescence confirms the passivation effect with ultra-thin layers and the reduced electric fields with thicker AlN layers. Atomic force microscopy shows that an ultra-thin AlN layer does not substantially alter the surface morphology.

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