Affordable Access

Deposition of Ag(In,Ga)Se-2 Solar Cells by a Modified Three-Stage Method Using a Low-Temperature-Deposited Ag-Se Cap Layer

The Japan Society of Applied Physics
Publication Date


Ag(In,Ga)Se2 (AIGS) films with a uniform Ag depth profile were successfully deposited by a modified three-stage method in which a Ag–Se layer was pre deposited at a low temperature (350 °C) before a high-temperature process at around 600 °C. The Ag–Se layer acted as a cap layer and effectively prevented the desorption of In from the films during the high-temperature process. The In/(In+Ga) ratio of the AIGS films was found to be about 0.15. The best AIGS solar cell deposited by this method showed an active area conversion efficiency of 10.7%.

There are no comments yet on this publication. Be the first to share your thoughts.