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Study of the effect of tunneling through the traps inside the insulator on small-signal admittance of the MOS structure

Authors
Journal
Microelectronic Engineering
0167-9317
Publisher
Elsevier
Volume
109
Identifiers
DOI: 10.1016/j.mee.2013.03.087
Keywords
  • Insulator Traps
  • Tunneling
  • Admittance Model
  • Mos Tunnel Diode
Disciplines
  • Mathematics

Abstract

Abstract The effect of tunneling through traps located inside the insulator layer on the small-signal admittance parameters of the MOS tunnel diode is investigated by means of the theoretical model. An influence of geometric and energy positions of the traps is studied. The model and considerations are confirmed by a comparison with measurement data of an experimental Al–SiO2–Si structure.

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